Signals in non-irradiated and irradiated single-sided silicon detectors

被引：21

作者：

Kramberger, G ^{[1
]}

Cindro, V

Mikuz, M

机构：

[1] Univ Ljubljana, Jozef Stefan Inst, SI-1000 Ljubljana, Slovenia

[2] Univ Ljubljana, Dept Phys, SI-1000 Ljubljana, Slovenia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 457卷 / 03期

关键词：

full depletion voltage; electric field; LHC detectors;

D O I：

10.1016/S0168-9002(00)00776-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A simulation of signals in silicon microstrip detectors (p(+)-n-n(+)) has been written. Electron-hole pairs are created by electrons from Sr-90 beta source with Landau fluctuations considered. Simulated induced currents calculated according to Ramo's theorem are integrated and shaped. For irradiated sensors, trapping is included in the drift simulation. Using many Monte Carlo generated events, the charge collection efficiency (CCE) is calculated as a function of shaping time, applied voltage, and temperature. Results are compared with CCE measurements of unirradiated and irradiated strip detectors using readout chip (SCT 32A) with 25 ns peaking time. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：550 / 557

页数：8

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