Single-sided p+n and double-sided silicon strip detectors exposed to fluences up to 2 x 1014/cm2 24 GeV protons

被引：23

作者：

Andricek, L ^{[1
]}

Gebhart, T

Hauff, D

Kemmer, J

Koffeman, E

Lutz, G

Richter, RH

Rohe, T

Wunstori, R

机构：

[1] Max Planck Inst Phys, D-80805 Munchen, Germany

[2] KETEK Gmbh, Oberschleissheim, Germany

[3] Univ Dortmund, Dortmund, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1998年 / 409卷 / 1-3期

关键词：

D O I：

10.1016/S0168-9002(97)01259-X

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Single-sided p(+)n and double-sided detectors have been designed for surviving the drastic changes of material properties expected from their use in the harsh radiation environment at the LHC. Detectors optimized for capacitive charge division readout have been exposed to a fluence of 2x10(14)/cm(2) 24GeV protons. Their principal design characteristics and properties after irradiation are described. An explanation for the hitherto not understood survival of single-sided pin detectors is given. First results with single-sided pin detectors optimized for binary readout are presented. (C) 1998 Elsevier Science B.V. All rights reserved.

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收藏

页码：184 / 193

页数：10

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