The direct patterning of nanoporous interlayer dielectric insulator films by nanoimprint lithography

被引：26

作者：

Ro, Hyun Wook

Jones, Ronald L.

Peng, Huagen

Hines, Daniel R.

Lee, Hae-Jeong

Lin, Eric K.

Karim, Alamgir

Yoon, Do Y.

Gidley, David W.

Soles, Christopher L.

机构：

[1] NIST, Div Polymers, Gaithersburg, MD 20899 USA

[2] Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA

[3] Univ Maryland, Lab Phys Sci, College Pk, MD 20740 USA

[4] Seoul Natl Univ, Dept Chem, Seoul 151747, South Korea

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 19期

关键词：

D O I：

10.1002/adma.200602872

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanoscale parallel line-space patterns are imprinted into a spin-on organosilicate thin film that contains a second phase pore generating material (porogen). Imprints are converted into nanoporous low-dielectric patterns by vitrification at 430 degrees C where the porogen is volatilized and creates nanoscale pores (2.2 nm) in the vitrified organosilicate network (see figure). The results are well-defined, high-modulus, nanoporous patterns with an estimated dielectric constant of k-2.4.

引用

收藏

页码：2919 / +

页数：7

相关论文

共 26 条

[1]

ANKER JF, 1992, P SOC PHOTO-OPT INS, V1738, P260

[2] Fabrication of 5 nm linewidth and 14 nm pitch features by nanoimprint lithography [J].

Austin, MD ;

Ge, HX ;

Wu, W ;

Li, MT ;

Yu, ZN ;

Wasserman, D ;

Lyon, SA ;

Chou, SY .

APPLIED PHYSICS LETTERS, 2004, 84 (26) :5299-5301

[3] Fabrication of Au nanowires on hydrogen silsesquioxane by nanoimprint transfer [J].

Chen, HJH ;

Liu, JF ;

Hsu, YJ ;

Syu, JCC ;

Huang, FS .

NANOTECHNOLOGY, 2005, 16 (12) :2913-2918

[4] Imprint lithography with sub-10 nm feature size and high throughput [J].

Chou, SY ;

Krauss, PR .

MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) :237-240

[5] Imprint lithography with 25-nanometer resolution [J].

Chou, SY ;

Krauss, PR ;

Renstrom, PJ .

SCIENCE, 1996, 272 (5258) :85-87

[6] IMPRINT OF SUB-25 NM VIAS AND TRENCHES IN POLYMERS [J].

CHOU, SY ;

KRAUSS, PR ;

RENSTROM, PJ .

APPLIED PHYSICS LETTERS, 1995, 67 (21) :3114-3116

[7] Characterization and modeling of volumetric and mechanical properties for step and flash imprint lithography photopolymers [J].

Colburn, M ;

Suez, I ;

Choi, BJ ;

Meissl, M ;

Bailey, T ;

Sreenivasan, SV ;

Ekerdt, JG ;

Willson, CG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (06) :2685-2689

[8] Recent progress in nanoimprint technology and its applications [J].

Guo, LJ .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (11) :R123-R141

[9] Small angle x-ray scattering metrology for sidewall angle and cross section of nanometer scale line gratings [J].

Hu, TJ ;

Jones, RL ;

Wu, WL ;

Lin, EK ;

Lin, QH ;

Keane, D ;

Weigand, S ;

Quintana, J .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (04) :1983-1987

[10] Polymer imprint lithography with molecular-scale resolution [J].

Hua, F ;

Sun, YG ;

Gaur, A ;

Meitl, MA ;

Bilhaut, L ;

Rotkina, L ;

Wang, JF ;

Geil, P ;

Shim, M ;

Rogers, JA ;

Shim, A .

NANO LETTERS, 2004, 4 (12) :2467-2471