Observation of step bunches in units of 4 ML on vicinal Si(113) surfaces

被引：16

作者：

Zhu, JH ^{[1
]}

Brunner, K ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 17期

关键词：

D O I：

10.1063/1.122474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Step bunching with a bunching unit of a four-atomic step has been observed on vicinal Si(113) surfaces which are misoriented by 0.37 degrees towards a direction about 36 degrees off [(1) over bar 10]. A strong short-range attractive interaction and a long-range repulsive interaction between the four-atomic steps have been revealed. The influence of the repulsive interaction is observed even at about 700 degrees C. The bunching can be enhanced by optimizing the growth conditions followed by annealing. The experiments confirm the low surface energy of the Si(113) plane. (C) 1998 American Institute of Physics. [S0003-6951(98)02943-X].

引用

页码：2438 / 2440

页数：3

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