Effects of annealing temperature and heat-treatment duration on electrical properties of sol-gel derived indium-tin-oxide thin films

被引：39

作者：

Beaurain, A. ^{[2
]}

Luxembourg, D. ^{[2
]}

Dufour, C. ^{[2
]}

Koncar, V. ^{[3
]}

Capoen, B. ^{[1
]}

Bouazaoui, M. ^{[1
]}

机构：

[1] Univ Sci & Technol Lille, CNRS, UMR 8523, PhLAM, F-59655 Villeneuve Dascq, France

[2] Univ Sci & Technol Lille, CNRS, UMR 8520, IEMN, F-59652 Villeneuve Dascq, France

[3] GEMTEX, F-59056 Roubaix, France

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 12期

关键词：

ITO nanoparticles; sol-gel; morphology; dip-coating;

D O I：

10.1016/j.tsf.2007.10.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent indium tin oxide (ITO) thin films have been deposited by the dip-coating process on silica substrates using solutions of 2,4-pentanedione, ethanol, indium, and tin salts. The films have been first dried in air at 260 degrees C for 10 min and then annealed in a reducing atmosphere at different temperatures for various durations. The resistivity of ITO layers was found to decrease with increasing the metal concentration of the starting solution or the annealing temperature. Hence, by adjusting both metal concentration in the coating solution and heat-treatment, resistivities lower than 5 x 10(-3) Omega cm for an annealing temperature of 550 degrees C and lower than 2 x 10(-2) Omega cm for an annealing temperature of 300 degrees C, were obtained. These results are correlated with the density and the size of ITO grains in the films. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：4102 / 4106

页数：5

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