LATTICE-DEFECTS IN O+ IMPLANTED TIN-DOPED INDIUM OXIDE-FILMS

In this work we use transmission electron microscopy to identify extended lattice defects which result from O+ ion implantation at a dose of 1.3 x 10(15)/cm2 into S n-doped In2O3 at room temperature. Measurement of the resistivity, mobility, carrier density, and transmissivity to visible light as a function of implant dose (0 to 1.3 x 10(15)/cm2) reveals that increasing dose results in a degradation in electronic and optical properties of ITO. Analysis of these results using charged and neutral scattering models reveals that the observed changes in electronic and optical properties may be due to the generation of neutral scattering centers. Transmission electron microscopy analysis of heavily O+ implanted films reveals the presence of intragranular regions of isolated strain contrast indicating lattice damage which may be associated with these neutral scatter centers.