Atomic structure of the diamond (100) surface studied using scanning tunneling microscopy

被引:20
作者
Stallcup, RE
Villarreal, LM
Lim, SC
Akwani, I
Aviles, AF
Perez, JM
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 02期
关键词
D O I
10.1116/1.589177
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Atomic resolution ultrahigh-vacuum scanning tunneling microscopy studies of chemical-vapor-deposition-grown epitaxial diamond (100) films are reported. After growth, the surface of the epitaxial films is amorphous at the atomic scale. After 2 min of exposure to atomic hydrogen at 30 Torr; the surface is observed to consist of amorphous regions and (2x1) dimer reconstructed regions. After 5 min of exposure to atomic hydrogen, the surface is observed to consist mostly of (2x1) dimer reconstructed regions. These observations are compared with a recent model for chemical-vapor-deposition diamond growth. Tunneling current versus voltage spectroscopy of undoped and boron-doped epitaxial diamond (100) films is also reported. (C) 1996 American Vacuum Society.
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收藏
页码:929 / 932
页数:4
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