EPITAXIAL-GROWTH OF HIGH-QUALITY DIAMOND FILM BY THE MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION METHOD

High-quality diamond epitaxial films were obtained on Ib diamond (100) substrates by means of the microwave plasma-assisted chemical-vapor-deposition (CVD) method. For the source gas, CH4and H2gases were used in different CH4concentrations (CH4/H2), from 1 vol% to 8 vol%. At CH4/H2=6%, the surfaces of the films were smooth and streaks were observed by reflection high-energy electron diffraction (RHEED). Raman spectra showed that they had no graphitic components. In contrast, Raman spectra showed that both the (110) epitaxial films and the polycrystalline films grown at CH4=6% had graphitic components. © 1990 IOP Publishing Ltd.