Leakage current degradation and carrier conduction mechanisms for Cu/BCB damascene process under bias-temperature stress

被引：15

作者：

Kim, SU ^{[1
]}

Cho, TH ^{[1
]}

Ho, PS ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL | 1999年

关键词：

D O I：

10.1109/RELPHY.1999.761626

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：277 / 282

页数：6

共 4 条

[1] Full copper wiring in a sub-0.25 μm CMOS ULSI technology [J].

Edelstein, D ;

Heidenreich, J ;

Goldblatt, R ;

Cote, W ;

Uzoh, C ;

Lustig, N ;

Roper, P ;

McDevitt, T ;

Motsiff, W ;

Simon, A ;

Dukovic, J ;

Wachnik, R ;

Rathore, H ;

Schulz, R ;

Su, L ;

Luce, S ;

Slattery, J .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :773-776

[2] A high performance 1.5V, 0.10μm gate length CMOS technology with scaled copper metallization [J].

Gilbert, P ;

Yang, I ;

Pettinato, C ;

Angyal, M ;

Boeck, B ;

Fu, C ;

VanGompel, T ;

Tiwari, R ;

Sparks, T ;

Clark, W ;

Dang, C ;

Mendonca, J ;

Chu, B ;

Lucas, K ;

Kling, M ;

Roman, B ;

Park, E ;

Huang, F ;

Woods, M ;

Rose, D ;

McGuffin, K ;

Nghiem, A ;

Banks, E ;

McNelly, T ;

Feng, C ;

Sturtevant, J ;

De, H ;

Das, A ;

Veeraraghavan, S ;

Nkansah, F ;

Bhat, M .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :1013-1016

[3]

KIM SU, 1998, INT C SOL STAT DEV M, P268

[4] SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS [J].

ROSE, A .

PHYSICAL REVIEW, 1955, 97 (06) :1538-1544

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