Long-lived charge-separated state leading to DNA damage through hole transfer

被引：49

作者：

Kawai, K ^{[1
]}

Takada, T ^{[1
]}

Nagai, T ^{[1
]}

Cai, XC ^{[1
]}

Sugimoto, A ^{[1
]}

Fujitsuka, M ^{[1
]}

Majima, T ^{[1
]}

机构：

[1] Osaka Univ, SANKEN, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2003年 / 125卷 / 52期

关键词：

D O I：

10.1021/ja038309g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The hole transfer causes the long-lived charge-separated state in DNA during the photosensitized one-electron oxidation of DNA. The combination of the transient absorption measurement and DNA damage quantification by HPLC clearly demonstrated that the yield of the DNA damage correlates well with the lifetime of the charge-separated state. Copyright © 2003 American Chemical Society.

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页码：16198 / 16199

页数：2

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