Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition

被引：12

作者：

Caylor, JC

Sander, MS

Stacy, AM

Harper, JS

Gronsky, R

Sands, T ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Chem, Berkeley, CA 94720 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2001年 / 16卷 / 09期

关键词：

D O I：

10.1557/JMR.2001.0337

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Heteroepitaxial growth of the cubic skutterudite phase CoSb3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 degreesC and a bulk CoSb3 target with 0.75 at.% excess Sb. An InSb (a(0)=0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e.g., CoSb3 with a(0)=0.9034 nm) on the basis of a presumed 45 degrees rotated relationship with the InSb zinc blende structure. X-ray diffraction and transmission electron microscopy confirmed both the structure of the films and their epitaxial relationship: (001)(CoSb 3) parallel to (001)(InSb); [100](CoSb 3) parallel to [110](InSb).

引用

页码：2467 / 2470

页数：4

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