History, development, and applications of high-brightness visible light-emitting diodes

被引:175
作者
Dupuis, Russell D. [1 ]
Krames, Michael R. [2 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Ctr Compound Semicond, Atlanta, GA 30332 USA
[2] Philips Lumileds Lighting Co, San Jose, CA 95131 USA
关键词
epitaxial growth; epitaxial layers; light-emitting diodes (LEDS); light sources; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor lasers;
D O I
10.1109/JLT.2008.923628
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In a practical sense, the development of high-performance visible-spectrum light-emitting diodes (LEDs) has occurred over a period of over 60 years, beginning with the discovery of the first semiconductor p-n junction in 1940, the development of solid-state electronic band theory in the 1940s, the invention of the first bipolar transistor in 1947, and the demonstration of efficient light generation from III-V alloys in the 1950s and 1960s. This paper reviews some of the major scientific and technological developments and observations that have created the materials and device technologies currently used in the commercial mass production of high-brightness visible-spectrum LEDs and that have culminated in white-light sources exhibiting luminous efficacies of over 150 lm/W, far beyond what has been achieved with conventional lighting technologies.
引用
收藏
页码:1154 / 1171
页数:18
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