共 142 条
[1]
Akasaki I., 1988, Gallium Arsenide and Related Compounds 1987. Proceedings of the Fourteenth International Symposium, P633
[2]
Alferov Zh. I., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P972
[3]
Alferov Zh. I., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P1826
[4]
STIMULATED-EMISSION NEAR ULTRAVIOLET AT ROOM-TEMPERATURE FROM A GAN FILM GROWN ON SAPPHIRE BY MOVPE USING AN AIN BUFFER LAYER
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1990, 29 (02)
:L205-L206
[6]
P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1989, 28 (12)
:L2112-L2114
[8]
[Anonymous], 1997, Compound Semiconductor, P14
[10]
SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT
[J].
PHYSICAL REVIEW,
1947, 71 (10)
:717-727