Gate-dependent magnetoresistance phenomena in carbon nanotubes

被引:39
作者
Fedorov, G
Lassagne, B
Sagnes, M
Raquet, B
Broto, JM
Triozon, F
Roche, S
Flahaut, E
机构
[1] Lab Natl Champs Magnet Pulses, UMR5147, F-31342 Toulouse, France
[2] Commissariat Energie Atom, DSM, DRFMC, SPSMS, F-38054 Grenoble 9, France
[3] DRT, LETI, D2NT, LSCP, F-38054 Grenoble 9, France
关键词
D O I
10.1103/PhysRevLett.94.066801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We report on the first experimental study of the magnetoresistance of double-walled carbon nanotubes under a magnetic field as large as 50 T. By varying the field orientation with respect to the tube axis, or by gate-mediated shifting the Fermi level position, evidence for unconventional magnetoresistance is presented and interpreted by means of theoretical calculations.
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页数:4
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