Tunneling versus thermionic emission in one-dimensional semiconductors

被引：241

作者：

Appenzeller, J ^{[1
]}

Radosavljevic, M

Knoch, J

Avouris, P

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Forschungszentrum Julich, Inst Schichten & Grenzflachen, D-52425 Julich, Germany

来源：

PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.92.048301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This Letter focuses on the role of contacts and the influence of Schottky barriers on the switching in nanotransistors. Specifically, we discuss (i) the mechanism for injection from a three-dimensional metal into a low-dimensional semiconductor, i.e., the competition between thermionic emission and thermally assisted tunneling, (ii) the factors that affect tunneling probability with emphasis on the importance of the effective mass for transistor applications, and (iii) a novel approach that enables determination of barrier presence and its actual height.

引用

页数：4

共 14 条

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