Electrical properties and transport in boron nitride nanotubes

被引：103

作者：

Radosavljevic, M

Appenzeller, J ^{[1
]}

Derycke, V

Martel, R

Avouris, P

Loiseau, A

Cochon, JL

Pigache, D

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

[2] Off Natl Etud & Rech Aerosp, CNRS, Lab Etud Microstruct, F-92322 Chatillon, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 23期

关键词：

D O I：

10.1063/1.1581370

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated electronic devices based on single-walled boron nitride nanotubes (BNNTs). Our measurements indicate that all BNNTs are semiconducting, and p-doped. Temperature dependence of two terminal transport experiments suggests that at low drain fields, transport is dominated by thermionic emission over 250 - 300 meV Schottky contact barriers. Gate-induced barrier modulation was observed in vertically scaled devices, resulting in field-effect transistor operation. (C) 2003 American Institute of Physics.

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页码：4131 / 4133

页数：3

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