Characterizing and controlling Cu/(In plus Ga) ratio during CIS manufacturing

被引：4

作者：

Rühle, JU ^{[1
]}

Wieting, RD ^{[1
]}

机构：

[1] Siemens Solar Ind, Camarillo, CA 93012 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915872

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Characterization and control of a key process parameter during CIS manufacturing is described. A model is developed to calculate Cu/(In+Ga) (CIG) ratio changes during sputter deposition runs, as a function of target age, using methods of statistical process control. The model allows prediction of the maximum deposition time permissible while guaranteeing acceptable CIG ratios. Prediction of CIG ratio changes improves productivity by reducing the risk of yield loss caused by unacceptable CIG ratio and increasing the process throughput.

引用

页码：466 / 469

页数：4

共 8 条

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LU CS, 1975, J VAC SCI TECHNOLOGY, V12

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