Structural characterization of μc-Si:H films produced by RF magnetron sputtering

被引：5

作者：

Cerqueira, MF ^{[1
]}

Ferreira, JA ^{[1
]}

Andritschky, M ^{[1
]}

Costa, MFM ^{[1
]}

机构：

[1] Univ Minho, Dept Fis, P-4709 Braga, Portugal

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 43-4卷

关键词：

microcrystalline-silicon; Raman; X-ray; TEM;

D O I：

10.1016/S0167-9317(98)00236-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microcrystalline silicon thin films were produced by R.F. magnetron sputtering. The microstructure of these films has been studied by X-ray diffraction, Transmission Electron Microscopy (TEM) and Raman spectroscopy. Average values of crystalline size and strain obtained by the different techniques used are critically compared and the reasons for the differences are discussed. (C) 1998 Elsevier Science B.V. All rights reserved.

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收藏

页码：627 / 634

页数：8

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