Evaluation of imprint in fully integrated (La,Sr)CoO3/Pb(Nb,Zr,Ti)O3/(La,Sr)CoO3 ferroelectric capacitors

被引：50

作者：

Sadashivan, S ^{[1
]}

Aggarwal, S

Song, TK

Ramesh, R

Evans, JT

Tuttle, BA

Warren, WL

Dimos, D

机构：

[1] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA

[2] Radiant Technol, Albuquerque, NM 87106 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 04期

关键词：

D O I：

10.1063/1.366954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the imprint characteristics of fully integrated ferroelectric lead zirconate titanate based capacitors. These capacitors were fabricated using conducting perovskite La-Sr-Co-O electrodes. We have specifically focused on the effect of several test and capacitor variables, including temperature, unipolar stress amplitude, number of cycles, and device area. Two different figures of merit, one based on coercive voltage changes and the other based on differences in polarization values were used to quantify imprint. The imprint in our capacitors showed a small temperature dependence over the range that we have studied. The unidirectional pulse voltage amplitude had a larger influence on the imprint. (C) 1998 American Institute of Physics.

引用

页码：2165 / 2171

页数：7

共 27 条

[1] Hysteresis relaxation in (Pb,La)(Zr,Ti)O-3 thin film capacitors with (La,Sr)CoO3 electrodes [J].

Aggarwal, S ;

Dhote, AM ;

Ramesh, R ;

Warren, WL ;

Pike, GE ;

Dimos, D ;

Raymond, MV ;

Tuttle, BA ;

Evans, JT .

APPLIED PHYSICS LETTERS, 1996, 69 (17) :2540-2542

[2] A model for optical and electrical polarization fatigue in SrBi2Ta2O9 and Pb(Zr,Ti)O-3 [J].

AlShareef, HN ;

Dimos, D ;

Warren, WL ;

Tuttle, BA .

INTEGRATED FERROELECTRICS, 1997, 15 (1-4) :53-67

[3]

ALSHAREEF HN, 1996, J MATER RES, V9, P2960

[4] The temperature dependence of ferroelectric imprint [J].

Benedetto, JM ;

Roush, ML ;

Lloyd, IK ;

Ramesh, R ;

Rychlik, B .

INTEGRATED FERROELECTRICS, 1995, 10 (1-4) :279-288

[5]

BERNACKI SE, 1992, MATER RES SOC S P, V243, P135

[6]

CHALAMALA B, UNPUB

[7] Time-dependent and trap-related current conduction mechanism in ferroelectric Pb(ZrxTi1-x)O-3 films [J].

Chen, HM ;

Lan, JM ;

Chen, JL ;

Lee, YYM .

APPLIED PHYSICS LETTERS, 1996, 69 (12) :1713-1715

[8] An investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead-zirconate-titanate thin film capacitors for memory device applications [J].

Chen, JL ;

Chen, HM ;

Lee, JYM .

APPLIED PHYSICS LETTERS, 1996, 69 (26) :4011-4013

[9]

Dhote AM, 1996, APPL PHYS LETT, V68, P1350, DOI 10.1063/1.115931

[10]

EVANS JT, 1990, INT S APPL FERR ISAF

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