Guidelines for the power constrained design of a CMOS tuned LNA

被引:9
作者
Goo, JS [1 ]
Oh, KH [1 ]
Choi, CH [1 ]
Yu, ZP [1 ]
Lee, TH [1 ]
Dutton, RW [1 ]
机构
[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
来源
2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2000年
关键词
D O I
10.1109/SISPAD.2000.871260
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:269 / 272
页数:4
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