DESIGN AND PERFORMANCE OF LOW-CURRENT GAAS MMICS FOR L-BAND FRONT-END APPLICATIONS

被引：31

作者：

IMAI, Y ^{[1
]}

TOKUMITSU, M ^{[1
]}

MINAKAWA, A ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, YOKOSUKA ELECT COMMUN LABS, RADIO COMMUN SYST LABS, YOKOSUKA, KANAGAWA 23803, JAPAN

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1991年 / 39卷 / 02期

关键词：

D O I：

10.1109/22.102962

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs MMIC's with very low current and of very small size have been developed for L-band front-end applications. The MMIC's fully employ lumped LC elements with uniplanar configurations. There are two kinds of MMIC's: a low-noise amplifier and a mixer. The low-noise amplifier has a noise figure of 2.5 dB and a gain of 11.5 dB. The mixer has a conversion gain of 12.5 dB with small LO power of -3 dBm. Total current dissipation of the two MMIC's is less than 8 mA with 3 V drain bias voltages.

引用

页码：209 / 215

页数：7

共 13 条

[1] 0.3-MU-M ADVANCED SAINT FETS HAVING ASYMMETRIC N+-LAYERS FOR ULTRA-HIGH-FREQUENCY GAAS MMICS [J].