LOW-NOISE, LOW-POWER DISSIPATION GAAS MONOLITHIC BROAD-BAND AMPLIFIERS

被引：8

作者：

HONJO, K

SUGIURA, T

TSUJI, T

OZAWA, T

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1983年 / 31卷 / 05期

关键词：

D O I：

10.1109/TMTT.1983.1131513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：412 / 417

页数：6

共 10 条

[1]

ESTREICH DB, 1982, 1982 INT SOL STAT CI, P194

[2] ION-IMPLANTED E/D-TYPE GAAS IC TECHNOLOGY [J].

FURUTSUKA, T ;

TSUJI, T ;

KATANO, F ;

HIGASHISAKA, A ;

KURUMADA, K .

ELECTRONICS LETTERS, 1981, 17 (25-2) :944-945

[3] ULTRA-BROAD-BAND GAAS MONOLITHIC AMPLIFIER [J].

HONJO, K ;

SUGIURA, T ;

ITOH, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :1027-1033

[4] GAAS-FET ULTRABROAD-BAND AMPLIFIERS FOR GBIT-S DATA RATE SYSTEMS [J].

HONJO, K ;

TAKAYAMA, Y .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (07) :629-636

[5] ULTRABROADBAND GAAS MONOLITHIC AMPLIFIER [J].

HONJO, K ;

SUGIURA, T ;

ITOH, H .

ELECTRONICS LETTERS, 1981, 17 (24) :927-928

[6]

HORI S, 1982, 1982 IEEE MICR MILL, P16

[7] MONOLITHIC GAAS DIRECT-COUPLED AMPLIFIERS [J].

HORNBUCKLE, DP ;

VANTUYL, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :175-182

[8]

NISHIUMA M, 1981, 9TH P INT S GAAS REL, P425

[9]

Weidlich H. P., 1981, 1981 IEEE International Solid-State Circuits Conference. Digest of Papers, P192

[10] GRADED CHANNEL FETS - IMPROVED LINEARITY AND NOISE-FIGURE [J].

WILLIAMS, RE ;

SHAW, DW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :600-605

← 1 →