0.3-MU-M ADVANCED SAINT FETS HAVING ASYMMETRIC N+-LAYERS FOR ULTRA-HIGH-FREQUENCY GAAS MMICS

被引：29

作者：

ENOKI, T

YAMASAKI, K

OSAFUNE, K

OHWADA, K

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 01期

关键词：

D O I：

10.1109/16.2411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：18 / 24

页数：7

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共 9 条

[1] ENOKI T, 1985, 17TH C SOL STAT DEV, P413
[2] OPTIMIZATION OF ION-IMPLANTED LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
FENG, M
EU, VK
KANBER, H
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1171 - 1176
[3] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS
FUKUI, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1032 - 1037
[4] LOW-NOISE MESFETS FOR ION-IMPLANTED GAAS MMICS
GUPTA, AK
SIU, DP
IP, KT
PETERSEN, WC
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (12) : 1072 - 1076
[5] A GAAS 16-KBIT STATIC RAM USING DISLOCATION-FREE CRYSTAL
HIRAYAMA, M
TOGASHI, M
KATO, N
SUZUKI, M
MATSUOKA, Y
KAWASAKI, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 104 - 110
[6] TAKADA T, 1985, P IEEE MICROWAVE MIL, P22
[7] SELF-ALIGN IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) FOR HIGH-SPEED GAAS ICS
YAMASAKI, K
ASAI, K
MIZUTANI, T
KURUMADA, K
[J]. ELECTRONICS LETTERS, 1982, 18 (03) : 119 - 121
[8] DETERMINATION OF EFFECTIVE SATURATION VELOCITY IN N+ SELF-ALIGNED GAAS-MESFETS WITH SUBMICROMETER GATE LENGTHS
YAMASAKI, K
HIRAYAMA, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1652 - 1658
[9] BELOW 10 PS/GATE OPERATION WITH BURIED P-LAYER SAINT FETS
YAMASAKI, K
KATO, N
HIRAYAMA, M
[J]. ELECTRONICS LETTERS, 1984, 20 (25-2) : 1029 - 1031