OPTIMIZATION OF ION-IMPLANTED LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：7

作者：

FENG, M

EU, VK

KANBER, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 04期

关键词：

D O I：

10.1063/1.334045

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1171 / 1176

页数：6

共 12 条

[1] LOW-NOISE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR MADE BY ION-IMPLANTATION [J].

FENG, M ;

EU, VK ;

KANBER, H ;

WATKINS, E ;

SCHELLENBERG, JM ;

YAMASAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :802-804

[2] HIGH-PERFORMANCE ION-IMPLANTED LOW-NOISE GAAS-MESFETS [J].

FENG, M ;

EU, VK ;

KANBER, H ;

HACKETT, R .

ELECTRON DEVICE LETTERS, 1982, 3 (11) :327-329

[3] SILICON IMPLANTED SUPER LOW-NOISE GAAS-MESFET [J].

FENG, M ;

EU, VK ;

SIRACUSA, M ;

WATKINS, E .

ELECTRONICS LETTERS, 1982, 18 (01) :21-23

[4]

FENG M, 1983, I PHYS C SER, V65, P325

[5] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS [J].

FUKUI, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1032-1037

[6] GAAS MICROWAVE-POWER FET [J].

FUKUTA, M ;

SUYAMA, K ;

SUZUKI, H ;

ISHIKAWA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :388-394

[7] LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION [J].

HIGGINS, JA ;

KUVAS, RL ;

EISEN, FH ;

CHEN, DR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :587-596

[8]

Huang C., 1981, 1981 IEEE MTT-S International Microwave Symposium Digest, P25

[9]

Kamei K., 1980, International Electron Devices Meeting. Technical Digest, P102

[10] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE [J].

OHATA, K ;

ITOH, H ;

HASEGAWA, F ;

FUJIKI, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1029-1034

← 1 2 →