A LOW-NOISE GAAS MONOLITHIC BROAD-BAND AMPLIFIER USING A DRAIN CURRENT SAVING TECHNIQUE

被引：9

作者：

OSAFUNE, K

KATO, N

SUGETA, T

YAMAO, Y

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1985年 / 33卷 / 06期

关键词：

D O I：

10.1109/TMTT.1985.1133116

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：543 / 545

页数：3

共 11 条

[1] A GAAS MONOLITHIC LOW-NOISE BROAD-BAND AMPLIFIER [J].

ARCHER, JA ;

WEIDLICH, HP ;

PETTENPAUL, E ;

PETZ, FA ;

HUBER, J .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1981, 16 (06) :648-652

[2] A MONOLITHIC WIDEBAND GAAS IC AMPLIFIER [J].

ESTREICH, DB .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (06) :1166-1173

[3]

HIRAYAMA M, 1984, FEB ISSCC, P46

[4]

HONJO K, 1982 P GAAS IC S, P87

[5]

NISHIUMA M, 1981, 1981 INT S GAAS REL

[6]

NISHIUMA M, 1983, FEB ISSCC, P194

[7]

PETERSON WC, 1982, 1982 IEEE MICR MILL, P20

[8]

TAJIMA J, 1984, IEEE T MICROW THEORY, V32, P542, DOI 10.1109/TMTT.1984.1132722

[9] A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION [J].

TAKADA, T ;

YOKOYAMA, K ;

IDA, M ;

SUDO, T .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (05) :719-724

[10]

TAKADA T, TGSSD83124 IECE JAP, P9

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