A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION

[1] A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 448 - 456

[2] GREY PE, 1963, PHYSICAL ELECTRONICS

[3] Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

[4] ANALYTICAL MODEL OF GAAS MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 612 - 618

[5] 2-DIMENSIONAL NUMERICAL-ANALYSIS OF STABILITY-CRITERIA OF GAAS FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) : 1283 - 1290

[6] DRAIN CONDUCTANCE OF JUNCTION GATE FETS IN HOT-ELECTRON RANGE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) : 545 - 553

[7] YOKOYAMA K, UNPUB NONLINEAR CAPA

[1] A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) : 448 - 456

[2] GREY PE, 1963, PHYSICAL ELECTRONICS

[3] Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

[4] ANALYTICAL MODEL OF GAAS MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 612 - 618

[5] 2-DIMENSIONAL NUMERICAL-ANALYSIS OF STABILITY-CRITERIA OF GAAS FETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) : 1283 - 1290

[6] DRAIN CONDUCTANCE OF JUNCTION GATE FETS IN HOT-ELECTRON RANGE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (06) : 545 - 553

[7] YOKOYAMA K, UNPUB NONLINEAR CAPA