Inkjet printing of polymer thin film transistors

被引:235
作者
Kawase, T
Shimoda, T
Newsome, C
Sirringhaus, H
Friend, RH
机构
[1] Seiko Epson Corp, Technol Platform Res Ctr, Nagano 3990293, Japan
[2] Cambridge Res Lab Epson, Cambridge CB4 0FE, England
[3] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
关键词
polymeric semiconductor; active-matrix backplane; poly (ethylenedioxythiophene);
D O I
10.1016/S0040-6090(03)00801-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
All-polymer thin film transistors, inverters and active-matrix backplanes have been fabricated by inkjet printing technique. Source, drain and gate electrodes were printed with an aqueous dispersion of conducting polymer, poly (ethylenedioxythiophene) (PEDOT). The semiconductor and the gate dielectric were spin-coated from solutions of conjugated polymer and insulator polymer, respectively. In order to overcome the resolution limit of inkjet printing, PEDOT aqueous dispersion has been deposited onto a pre-patterned substrate which involves wettability contrast to define a channel, and polymer transistors with a channel length of 5 mum have been achieved. These transistors were applied to inverter circuits and active-matrix backplanes. Active-matrix operation of an electrophoretic display device has been demonstrated with the printed polymer active-matrix backplane. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:279 / 287
页数:9
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