Metallization and nanostructuring of semiconductor surfaces by galvanic displacement processes

被引:150
作者
Carraro, Carlo [1 ]
Maboudian, Roya [1 ]
Magagnin, Luca [2 ]
机构
[1] Univ Calif Berkeley, Dept Chem Engn, Berkeley, CA 94720 USA
[2] Politecn Milan, Dipartimento Chim Mat & Ing Chim G Natta, I-20133 Milan, Italy
基金
美国国家科学基金会;
关键词
galvanic deposition; metalization; semiconductor surfaces; electrodeposition; electroless deposition;
D O I
10.1016/j.surfrep.2007.08.002
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The deposition of metals on semiconductors encompasses a broad range of technologically important processes, with applications ranging from electronic devices to chemical sensors. Recent years have witnessed a surge of research activities in galvanic displacement processes on semiconductor substrates. After a brief review, of the fundamental aspects underlying galvanic displacement processes on semiconductor surfaces, this paper discusses applications to micro- and nanoscale devices, including schemes developed for the metallization and nanopatterning of semiconductor substrates with high selectivity and with optimal interfacial properties. (c) 2007 Elsevier B.V All rights reserved.
引用
收藏
页码:499 / 525
页数:27
相关论文
共 183 条
[1]   Nanoscale patterning of two metals on silicon surfaces using an ABC triblock copolymer template [J].
Aizawa, M ;
Buriak, JM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (17) :5877-5886
[2]   Silver nano-inukshuks on germanium [J].
Aizawa, M ;
Cooper, AM ;
Malac, M ;
Buriak, JM .
NANO LETTERS, 2005, 5 (05) :815-819
[3]   SELF-ASSEMBLED MONOLAYER FILM FOR ENHANCED IMAGING OF ROUGH SURFACES WITH ATOMIC-FORCE MICROSCOPY [J].
ALLEY, RL ;
KOMVOPOULOS, K ;
HOWE, RT .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (10) :5731-5737
[4]   ETCHING MECHANISM AND ATOMIC-STRUCTURE OF H-SI(111) SURFACES PREPARED IN NH4F [J].
ALLONGUE, P ;
KIELING, V ;
GERISCHER, H .
ELECTROCHIMICA ACTA, 1995, 40 (10) :1353-1360
[5]   The preparation of flat H-Si(111) surfaces in 40% NH4F revisited [J].
Allongue, P ;
de Villeneuve, CH ;
Morin, S ;
Boukherroub, R ;
Wayner, DDM .
ELECTROCHIMICA ACTA, 2000, 45 (28) :4591-4598
[6]  
[Anonymous], 2001, ELECTROCHEMISTRY NAN
[7]   AFM investigation of gold nanoparticles synthesized in water/AOT/n-heptane microemulsions [J].
Arcoleo, V ;
Liveri, VT .
CHEMICAL PHYSICS LETTERS, 1996, 258 (1-2) :223-227
[8]   Dichlorodimethylsilane as an anti-stiction monolayer for MEMS: A comparison to the octadecyltrichlosilane self-assembled monolayer [J].
Ashurst, WR ;
Yau, C ;
Carraro, C ;
Maboudian, R ;
Dugger, MT .
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2001, 10 (01) :41-49
[9]  
BALASHOVA NA, 1965, ELEKTROKHIMIYA, V1, P274
[10]   THE ELECTRODE-ELECTROLYTE INTERFACE - A STATUS-REPORT [J].
BARD, AJ ;
ABRUNA, HD ;
CHIDSEY, CE ;
FAULKNER, LR ;
FELDBERG, SW ;
ITAYA, K ;
MAJDA, M ;
MELROY, O ;
MURRAY, RW ;
PORTER, MD ;
SORIAGA, MP ;
WHITE, HS .
JOURNAL OF PHYSICAL CHEMISTRY, 1993, 97 (28) :7147-7173