Effect of pH on ceria-silica interactions during chemical mechanical polishing

被引：50

作者：

Abiade, JT ^{[1
]}

Choi, W

Singh, RK

机构：

[1] Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Particle Engn Res Ctr, Gainesville, FL 32611 USA

[3] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

JOURNAL OF MATERIALS RESEARCH | 2005年 / 20卷 / 05期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.2005.0176

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

To understand the ceria-silica chemical mechanical polishing (CMP) mechanisms, we studied the effect of ceria slurry pH on silica removal and surface morphology. Also, in situ friction force measurements were conducted. After polishing; atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy were used to quantify the extent of the particle-substrate interaction during CMP. Our results indicate the silica removal by ceria slurries is strongly pH dependent, with the maximum occurring near the isoelectric point of the ceria slurry.

引用

收藏

页码：1139 / 1145

页数：7

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