Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors

被引：30

作者：

Brunet, M. ^{[1
]}

Kotb, H. Mafhoz ^{[2
]}

Bouscayrol, L. ^{[1
]}

Scheid, E. ^{[1
]}

Andrieux, M. ^{[3
]}

Legros, C. ^{[3
]}

Schamm-Chardon, S. ^{[4
]}

机构：

[1] Univ Toulouse, CNRS, LAAS, F-31077 Toulouse, France

[2] Univ Assiut, Dept Phys, Fac Sci, Assiut 71516, Egypt

[3] Univ Paris 11, LEMHE ICMMO, CNRS, UMR 8182, F-91405 Orsay, France

[4] Univ Toulouse, NMat Grp, CEMES CNRS, F-31055 Toulouse, France

来源：

THIN SOLID FILMS | 2011年 / 519卷 / 16期

关键词：

Metal organic chemical vapor deposition; Zirconium oxide; Tetragonal; High dielectric constant; 3D capacitors; Transmission electron microscopy; Electrical properties and measurements; ATOMIC LAYER DEPOSITION; ELECTRICAL-PROPERTIES; HIGH-DENSITY; ZIRCONIA; SPECTRA; MOCVD; PURE;

D O I：

10.1016/j.tsf.2011.03.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZrO2 is a potential candidate for the realization of 3D capacitors on silicon for future Systems-on-Chip. This paper reports on the deposition of ZrO2 thin films by metal-organic chemical vapor deposition on planar and 3D structures. Physico-chemical as well as electrical properties of the films are investigated. It is shown that the change of phase and microstructure of the film due to annealing at 900 degrees C under O-2 impacts directly on the electrical performance of the capacitors. Capacitance densities are 2 nF/mm(2) for planar capacitors and reach 8 nF/mm(2) for capacitors with pores etched in silicon with a 4:1 aspect ratio. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：5638 / 5644

页数：7

共 38 条

[1] Growth kinetics and structure formation of ZrO2 thin films in chloride-based atomic layer deposition process [J].