Room-temperature InAsSb photodiodes: Theoretical predictions and experimental data

A numerical technique has been used to solve the carrier transport equations for n(+)-p and p(+)-n InAs1-xSbx (0 less than or equal to x less than or equal to 0.40) (InAsSb) photodiode configurations operating near room temperature. The model calculates the spatial distribution of the electric field, the electron and hole concentrations and the generation-recombination mechanisms. Also the effect of doping profiles on the photodiode parameters (R(0)A product, detectivity) is analyzed. It is shown that the theoretical performance of high temperature InAsSb photodiodes is comparable to that of HgCdTe photodiodes. The R(0)A product is controlled by a diffusion limited mechanism. This fact together with some advantages of InAsSb in comparison with HgCdTe indicates that InAsSb is a potential competitor to HgCdTe as material for intrinsic detectors in the 3-5 and 8-12 mu m spectral range. Copyright (C) 1996 Elsevier Science Ltd