Low-leakage polymeric thin-film transistors fabricated by laser assisted lift-off technique

Organic thin-film transistors (OTFTs) based on a semiconducting polymer have been fabricated using a patterning method of the selective wettability. Laser assisted lift-off (LALO) technique, ablating selectively the hydrophobic layer by an excimer laser, was used for producing a semiconducting polymer channel in the OTFT with high resolution. The selective wettability of a semiconducting polymer, poly(9-9-dioctylfluorene-co-bithiophene) (F8T2), dissolved in a polar solvent was found to define precisely the pattering resolution of the active channel. It is demonstrated that in the F8T2 TFFs fabricated using the LALO technique, the leakage of the gate current is drastically reduced.