Scanning tunneling microscopy images of the atoms in the corner holes on the Si(111)-(7 x 7) surface with bismuth-covered tips

被引：4

作者：

Bulavenko, SY ^{[1
]}

Melnik, PV ^{[1
]}

Nakhodkin, MG ^{[1
]}

机构：

[1] Kyiv Taras Shevchenko Univ, Radiophys Dept, UA-03033 Kyiv, Ukraine

来源：

SURFACE SCIENCE | 2000年 / 469卷 / 2-3期

关键词：

bismuth; scanning tunneling microscopy; semiconducting surfaces; silicon;

D O I：

10.1016/S0039-6028(00)00798-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The use of special tips in scanning tunneling microscopy experiments for studying the Si(111)-(7 x 7) surface is considered. The special tips are created by bismuth deposition on tungsten tips. Images of the atoms in the corner holes are obtained for the first time and the unartificial nature of the images has been checked by the adsorption of a low amount of atomic hydrogen on the Si(111)-(7 x 7) surface. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：127 / 132

页数：6

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