Self-trapped exciton recombination in silicon nanocrystals

被引：80

作者：

Kobitski, AY ^{[1
]}

Zhuravlev, KS

Wagner, HP

Zahn, DRT

机构：

[1] TU Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

[2] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

PHYSICAL REVIEW B | 2001年 / 63卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.63.115423

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we investigate the time-resolved and stationary photoluminescence (PL) Of silicon nanocrystals fabricated in a silicon oxide matrix. The PL intensity reveals a nonexponential decay for all temperatures which can be fitted by a ''stretch'' -exponential function. From 60 down to 5 K an increase of decay time is observed going along with a decrease of the PL intensity. In addition the PL spectra show a shape change during the decay. The experimental data are interpreted in the model of self-trapped excitons (STE) which are localized in a Si-Si dimer. A numerical simulation of this model provides the radiative and nonradiative recombination times of the STE transition, the energy of the STE singlet-triplet splitting and the height of the self-trapped barrier.

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页数：4

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