Tungsten nitride inverse opals by atomic layer deposition

被引：86

作者：

Rugge, A

Becker, JS

Gordon, RG

Tolbert, SH

机构：

[1] Harvard Univ, Dept Chem, Cambridge, MA 02138 USA

[2] Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90095 USA

来源：

NANO LETTERS | 2003年 / 3卷 / 09期

关键词：

D O I：

10.1021/nl034362r

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this letter, we demonstrate a new method of creating inverse opal structures by infiltrating thin-film colloidal crystals using atomic layer deposition (ALD) and then dissolving the templating particles. ALD offers several advantages over previous techniques including improved step-coverage of high aspect ratio structures and high conformality. In addition, ALD allows for the preparation of a large variety of non-oxide materials (in particular nitrides) with desirable optoelectronic properties and a diversity of phases. Here we form a metallic tungsten nitride inverse opal as an example.

引用

页码：1293 / 1297

页数：5

共 37 条

[1] Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia [J].