Highly uniform and reproducible vertical-cavity surface-emitting lasers grown by metalorganic vapor phase epitaxy with in situ reflectometry

被引：24

作者：

Hou, HQ ^{[1
]}

Chui, HC ^{[1
]}

Choquette, KD ^{[1
]}

Hammons, BE ^{[1
]}

Breiland, WG ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,SAN JOSE,CA 95131

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 10期

关键词：

D O I：

10.1109/68.536629

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical-cavity surface-emitting lasers (VCSEL's) were grown by metalorganic vapor phase epitaxy, Excellent uniformity of Fabry-Perot cavity wavelength for VCSEL materials of +/-0.2% across a 3-in diameter wafer was achieved, This results in excellent uniformity of the lasing wavelength and threshold current of VCSEL devices. Employing pregrowth calibrations on growth rates periodically with an ill situ reflectometer, we obtained a run-to-run wavelength reproducibility for 770- and 850-nm VCSEL's of +/-0.3% over the course of more than a hundred runs.

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收藏

页码：1285 / 1287

页数：3

相关论文

共 11 条

[1] APPLICATION OF ELLIPSOMETRY TO CRYSTAL-GROWTH BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY [J].

ASPNES, DE ;

QUINN, WE ;

GREGORY, S .

APPLIED PHYSICS LETTERS, 1990, 56 (25) :2569-2571

[2] A VIRTUAL INTERFACE METHOD FOR EXTRACTING GROWTH-RATES AND HIGH-TEMPERATURE OPTICAL-CONSTANTS FROM THIN SEMICONDUCTOR-FILMS USING IN-SITU NORMAL INCIDENCE REFLECTANCE [J].

BREILAND, WG ;

KILLEEN, KP .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (11) :6726-6736

[3] FABRICATION AND PERFORMANCE OF SELECTIVELY OXIDIZED VERTICAL-CAVITY LASERS [J].

CHOQUETTE, KD ;

LEAR, KL ;

SCHNEIDER, RP ;

GEIB, KM ;

FIGIEL, JJ ;

HULL, R .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1237-1239

[4] Self-pulsing oxide-confined vertical-cavity lasers with ultralow operating current [J].

Choquette, KD ;

Hou, HQ ;

Lear, KL ;

Chui, HC ;

Geib, KM ;

Mar, A ;

Hammons, BE .

ELECTRONICS LETTERS, 1996, 32 (05) :459-460

[5] Performance, uniformity, and yield of 850-nm VCSEL's deposited by MOVPE [J].

HibbsBrenner, MK ;

Morgan, RA ;

Walterson, RA ;

Lehman, JA ;

Kalweit, EL ;

Bounnak, S ;

Marta, T ;

Gieske, R .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (01) :7-9

[6]

Hou HQ, 1996, ELEC SOC S, V96, P27

[7]

HOU HQ, IN PRESS DOPING IN S

[8] IN-SITU THICKNESS MONITORING AND CONTROL FOR HIGHLY REPRODUCIBLE GROWTH OF DISTRIBUTED BRAGG REFLECTORS [J].

HOUNG, YM ;

TAN, MRT ;

LIANG, BW ;

WANG, SY ;

MARS, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1221-1224

[9] COMPLEX REFRACTIVE-INDEXES OF ALGAAS AT HIGH-TEMPERATURES MEASURED BY INSITU REFLECTOMETRY DURING GROWTH BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KAWAI, H ;

IMANAGA, S ;

KANEKO, K ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :328-332

[10]

Lee T. P., 1995, CURRENT TRENDS VERTI