Preparation of silicon carbide by electrospraying of a polymeric precursor

被引：14

作者：

Grigoriev, DA ^{[1
]}

Edirisinghe, MJ ^{[1
]}

Bao, X ^{[1
]}

Evans, JRG ^{[1
]}

Luklinska, ZB ^{[1
]}

机构：

[1] Univ London, Dept Mat, London E1 4NS, England

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 2001年 / 81卷 / 04期

关键词：

D O I：

10.1080/09500830010028932

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon carbide (SiC) coatings and films have been prepared for the first time by electrostatic atomization of a solution of a polymeric precursor and deposition on to alumina and zirconia substrates. The deposits were heated to 1300 degreesC prior to their examination by X-ray energy-dispersive spectra and selected-area diffraction in scanning and transmission electron microscopes. The results show that these coatings and films are crystalline and probably consist of co-existing alpha -SiC and beta -SiC phases.

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页码：285 / 291

页数：7

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