Wave-function mapping of InAs quantum dots by scanning tunneling spectroscopy

被引：105

作者：

Maltezopoulos, T ^{[1
]}

Bolz, A ^{[1
]}

Meyer, C ^{[1
]}

Heyn, C ^{[1
]}

Hansen, W ^{[1
]}

Morgenstern, M ^{[1
]}

Wiesendanger, R ^{[1
]}

机构：

[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 19期

关键词：

D O I：

10.1103/PhysRevLett.91.196804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling spectroscopy is used to investigate the single-electron states and the corresponding squared wave functions of single and freestanding strain-induced InAs quantum dots grown on GaAs(001). Several peaks are found in dI/dV curves, which belong to different single-electron states. Spatially resolved dI/dV images reveal (000), (100), (010), (200), and (300) states, where the numbers describe the number of nodes in [1 (1) over bar0], [110], and [001] directions, respectively. The total number and energetic sequence of states is different for different dots. Interestingly, the (010) state is often missing, even when (200) and (300) states are present. We interpret this anisotropy in electronic structure as a consequence of the shape asymmetry of the dots.

引用

页数：4

共 30 条

[1]

Bimberg D., 1999, QUANTUM DOT HETEROST

[2]

BOLZ A, 2002, HASYLAB ANN REP, V1, P733

[3] Probing quantum nanostructures with near-field optical microscopy and vice versa [J].

Bryant, GW .

APPLIED PHYSICS LETTERS, 1998, 72 (07) :768-770

[4] InAs/GaAs-(001) quantum dots close to thermodynamic equilibrium [J].

Costantini, G ;

Manzano, C ;

Songmuang, R ;

Schmidt, OG ;

Kern, K .

APPLIED PHYSICS LETTERS, 2003, 82 (19) :3194-3196

[5] Tip-induced band bending by scanning tunneling spectroscopy of the states of the tip-induced quantum dot on InAs(110) [J].

Dombrowski, R ;

Steinebach, C ;

Wittneven, C ;

Morgenstern, M ;

Wiesendanger, R .

PHYSICAL REVIEW B, 1999, 59 (12) :8043-8048

[6] Self-consistent calculation of the electronic structure and electron-electron interaction in self-assembled InAs-GaAs quantum dot structures [J].

Fonseca, LRC ;

Jimenez, JL ;

Leburton, JP ;

Martin, RM .

PHYSICAL REVIEW B, 1998, 57 (07) :4017-4026

[7] Shell structure and electron-electron interaction in self-assembled InAs quantum dots [J].

Fricke, M ;

Lorke, A ;

Kotthaus, JP ;

MedeirosRibeiro, G ;

Petroff, PM .

EUROPHYSICS LETTERS, 1996, 36 (03) :197-202

[8] Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes [J].

Grandidier, B ;

Niquet, YM ;

Legrand, B ;

Nys, JP ;

Priester, C ;

Stiévenard, D ;

Gérard, JM ;

Thierry-Mieg, V .

PHYSICAL REVIEW LETTERS, 2000, 85 (05) :1068-1071

[9] INAS/GAAS PYRAMIDAL QUANTUM DOTS - STRAIN DISTRIBUTION, OPTICAL PHONONS, AND ELECTRONIC-STRUCTURE [J].

GRUNDMANN, M ;

STIER, O ;

BIMBERG, D .

PHYSICAL REVIEW B, 1995, 52 (16) :11969-11981

[10] Atomic structure of faceted planes of three-dimensional InAs islands on GaAs(001) studied by scanning tunneling microscope [J].

Hasegawa, Y ;

Kiyama, H ;

Xue, QK ;

Sakurai, T .

APPLIED PHYSICS LETTERS, 1998, 72 (18) :2265-2267

← 1 2 3 →