Band alignment at a ZnO/GaN (0001) heterointerface

被引：133

作者：

Hong, SK ^{[1
]}

Hanada, T

Makino, H

Chen, YF

Ko, HJ

Yao, T

Tanaka, A

Sasaki, H

Sato, S

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 21期

关键词：

D O I：

10.1063/1.1372339

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the experimental results of the valence band offset at a ZnO/GaN (0001) heterointerface. The ZnO/GaN (0001) heterointerface is prepared by growing a ZnO layer on (0001) GaN/Al2O3, in which the ZnO layer is epitaxially deposited by plasma-assisted molecular-beam epitaxy, while the GaN template is prepared by metalorganic chemical-vapor deposition. Ex situ ultraviolet and x-ray photoelectron spectroscopy have been used to measure the valence band offset DeltaE(V). The photoelectron spectroscopy measurements are done before and after Ar+ ion cleaning of the surfaces. Type-II band alignments with band offsets of DeltaE(V)=1.0 eV (before cleaning) and 0.8 eV (after cleaning) with the valence band maximum of GaN being placed above that of ZnO are obtained. (C) 2001 American Institute of Physics.

引用

页码：3349 / 3351

页数：3

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