Silicon di-interstitial in ion-implanted silicon

被引：46

作者：

Lee, YH ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 08期

关键词：

D O I：

10.1063/1.122116

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new Si di-interstitial model is derived from the Si-P6 electron paramagnetic resonance spectrum observed in neutron-, proton-, or ion-implanted silicon. Two Si interstitials lie in the {100} plane at a position considerably off from two tetrahedral interstitial sites nearby, sharing one Si lattice atom. The di-interstitial disappears at 170 degrees C annealing and can form the [110] interstitial chains which are considered to be a "building block" of the {311} extended defects frequently observed in ion-implanted Si. [S0003-6951(98)04234-X]

引用

页码：1119 / 1121

页数：3

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