Investigation of trap effects in AlGaN/GaN field-effect transistors by temperature dependent threshold voltage analysis

被引：45

作者：

Kordos, P. ^{[1
,2
]}

Donoval, D. ^{[1
]}

Florovic, M. ^{[1
]}

Kovac, J. ^{[1
]}

Gregusova, D. ^{[2
]}

机构：

[1] Slovak Tech Univ, Dept Microelect, SK-81219 Bratislava, Slovakia

[2] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

D O I：

10.1063/1.2911727

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a temperature dependent threshold voltage analysis of the AlGaN/GaN heterostructure field-effect transistors (HFETs) and Al2O3/AlGaN/GaN metal-oxide-semiconductor HFETs (MOSHFETs) in order to investigate the trap effects in these devices. The threshold voltage of both types of devices decreases with increased ambient temperature up to 450 degrees C. This indicates on donor traps to be present. The temperature induced threshold voltage shift is -1.6 and -8.5 mV/degrees C for the HFETs and MOSHFETs, respectively. A thermally activated energy level of similar to 0.2 eV is evaluated and attributed to the nitrogen vacancy in the AlGaN near surface. The trap density for the MOSHFETs is about two times higher than that for the HFETs. This might be due to the high-temperature treatment (similar to 600 degrees C) of the MOSHFET structure during the gate insulator deposition. (C) 2008 American Institute of Physics.

引用

页数：3

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