Electrical conductivity of polycrystalline SnO2(Cu) films and their sensitivity to hydrogen sulfide

被引：18

作者：

Akimov, BA ^{[1
]}

Albul, AV ^{[1
]}

Gaskov, AM ^{[1
]}

Ilin, VY ^{[1
]}

Rumyantseva, MN ^{[1
]}

Ryabova, LI ^{[1
]}

Labeau, M ^{[1
]}

机构：

[1] INST NATL POLYTECH GRENOBLE,F-38031 GRENOBLE,FRANCE

来源：

SEMICONDUCTORS | 1997年 / 31卷 / 04期

关键词：

D O I：

10.1134/1.1187182

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The effect of doping with copper on the sensor properties and the electrical conductivity of polycrystalline SnO2(Cu) films has been investigated. It has been found that at room temperature the residual conductivity is observed after the films are exposed to H2S. This made it possible to determine the character of the low-temperature conductivity of the films for different degrees of saturation with hydrogen sulfide. A comparison of the obtained data with the results of layerwise elemental analysis suggested a model that explains the mechanism of the gas sensitivity of SnO2(Cu) to hydrogen sulfide. In contrast to the mechanisms, which are associated with the work done by the surface and which are standard for gas sensors, in the present case the change in the conductivity is due to the chemical reaction of the electrically active copper with sulfur in the entire volume of the film. This reaction determines the selectivity and high sensitivity of SnO2(Cu) to H2S. (C) 1997 American Institute of Physics.

引用

页码：335 / 339

页数：5

共 10 条

[1] ELECTRICAL PROPERTIES OF HIGH-QUALITY STANNIC OXIDE CRYSTALS [J].