Novel spectromicroscopy: Pt-GaP studies by spatially resolved internal photoemission with near-field optics

被引：25

作者：

Almeida, J ^{[1
]}

Orto, TD ^{[1
]}

Coluzza, C ^{[1
]}

Margaritondo, G ^{[1
]}

Bergossi, O ^{[1
]}

Spajer, M ^{[1
]}

Courjon, D ^{[1
]}

机构：

[1] UNIV FRANCHE COMTE, LAB OPT, F-25030 BESANCON, FRANCE

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 16期

关键词：

D O I：

10.1063/1.117525

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The combination of internal photoemission and near-field optics is proposed as a generally applicable approach to study the lateral variations of solid interface properties such as energy barriers and electron-hole recombination rates. A successful test on Pt-GaP is described in which topographic and nontopographic phenomena are revealed, in particular recombination rate variations and small lateral changes of the Schottky barrier height. (C) 1996 American Institute of Physics.

引用

页码：2361 / 2363

页数：3

共 20 条

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