silicon monocrystalline;
anisotropic etching;
quality of Si surface;
texturizing;
hillocks;
D O I:
10.1016/S0924-4247(98)00142-3
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Experiments were carried out with anisotropic etching of Si(100) in alkaline solutions from the point of view of surface quality. The circumstances needed to obtain surfaces of various level of smoothness were established. The problem why etched surface is of mirror-like quality, texturized i.e., covered on the whole with random inequality ( sometime of pyramids shape) as well ones covered with single separated hillocks is discussed in the term of anisotropy. Some analogies between random texturizing, obtaining the hillocks and etching through a patterned SiO2 mask were stated. (C) 1998 Elsevier Science S.A. All rights reserved.
机构:Microfabrication Applications Laboratory, University of Illinois at Chicago, Department of Electrical Engineering and Computer Science (M/C 154), Chicago, IL 60680
JU, CS
;
HESKETH, PJ
论文数: 0引用数: 0
h-index: 0
机构:Microfabrication Applications Laboratory, University of Illinois at Chicago, Department of Electrical Engineering and Computer Science (M/C 154), Chicago, IL 60680
机构:Microfabrication Applications Laboratory, University of Illinois at Chicago, Department of Electrical Engineering and Computer Science (M/C 154), Chicago, IL 60680
JU, CS
;
HESKETH, PJ
论文数: 0引用数: 0
h-index: 0
机构:Microfabrication Applications Laboratory, University of Illinois at Chicago, Department of Electrical Engineering and Computer Science (M/C 154), Chicago, IL 60680