Recent results for single-junction and tandem quantum well solar cells

被引:55
作者
Adams, J. G. J. [1 ]
Browne, B. C. [1 ]
Ballard, I. M. [2 ]
Connolly, J. P. [3 ]
Chan, N. L. A. [1 ]
Ioannides, A. [1 ]
Elder, W. [1 ]
Stavrinou, P. N. [1 ]
Barnham, K. W. J. [1 ]
Ekins-Daukes, N. J. [1 ]
机构
[1] Univ London Imperial Coll Sci Technol & Med, Dept Phys, London SW7 2AZ, England
[2] Circadian Solar, Coventry CV4 7EZ, W Midlands, England
[3] Univ Politecn Valencia, Nanophoton Technol Ctr, Valencia 46022, Spain
来源
PROGRESS IN PHOTOVOLTAICS | 2011年 / 19卷 / 07期
关键词
quantum well; III-V; concentrator cells; multijunction; CARRIER ESCAPE; EFFICIENCY; GAAS;
D O I
10.1002/pip.1069
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The band gap of the quantum well (QW) solar cell can be adapted to the incident spectral conditions by tailoring the QW depth. The single-junction strain-balanced quantum well solar cell (SB-QWSC) has achieved an efficiency of 28.3%. The dominant loss mechanism at the high concentrator cell operating bias is due to radiative recombination, so a major route to further efficiency improvement requires a restriction of the optical losses. It has been found that (100) biaxial compressive strain suppresses a mode of radiative recombination in the plane of the QWs. As biaxial strain can only be engineered into a solar cell on the nanoscale, SB-QWSCs are seen to have a fundamental efficiency advantage over equivalent bulk cells. Strain-balanced quantum wells in multi-junction solar cells can current match the sub-cells without the introduction of dislocations. Calculations are shown which predict efficiency limits as a function of QW absorption and band gap for such cells. A dual-junction InGaP/GaAs solar cell with QWs in the bottom sub-cell has been grown and characterized. Laboratory and calculated efficiencies relative to control cells are presented for the reported cell and a modeled device, respectively. Copyright (C) 2011 John Wiley & Sons, Ltd.
引用
收藏
页码:865 / 877
页数:13
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