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Long-wavelength resonant vertical-cavity LED/photodetector with a 75-nm tuning range

被引：44
作者：
Christenson, GL
Tran, ATTD
Zhu, ZH
Lo, YH
Hong, M
Mannaerts, JP
Bhat, R
机构：
[1] CORNELL UNIV,SCH APPL & ENGN PHYS,ITHACA,NY 14853
[2] LUCENT TECHNOL,MURRAY HILL,NJ 07974
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 06期
基金：
美国国家科学基金会;
关键词：
frequency control; indium materials/devices; light-emitting diodes; microelectromechanical devices; semiconductor device bonding; tunable circuits/devices;
D O I：
10.1109/68.584970
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A design for a highly tunable long-wavelength LED/photodetector has been investigated, The device consists of a GaAs-based distributed Bragg reflector (DBR) that is wafer-bonded to InP-based active layers, with a surface-micromachined tunable top DBR mirror to produce the wavelength shift, A 1.5-mu m device has been fabricated with a continuous tuning range of 75 nm, An extinction ratio of greater than 20 dB existed across the entire tuning range.
引用
收藏
页码：725 / 727
页数：3
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