QUBiC3:: A 0.5μm BiCMOS production technology, with fT=30GHz, fmax=60GHz and high-quality passive components for wireless telecommunication applications

被引：23

作者：

Pruijmboom, A ^{[1
]}

Szmyd, D ^{[1
]}

Brock, R ^{[1
]}

Wall, R ^{[1
]}

Morris, N ^{[1
]}

Fong, K ^{[1
]}

Jovenin, F ^{[1
]}

机构：

[1] Philips Semicond, Albuquerque, NM 87113 USA

来源：

PROCEEDINGS OF THE 1998 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 1998年

关键词：

D O I：

10.1109/BIPOL.1998.741896

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

QUBiC3, a 0.5 mu m BiCMOS manufacturing technology is presented. The technology features a double-poly NPN transistor with fT = 30GHz, fmax = 60GHz and NFmin@2GHz=0.64dB, added to a stand-alone CMOS technology. It also includes high-quality passive components and lateral PNP transistors. Low-K dielectrics and a thick fourth layer of metal provide minimized back-end parasitics and high-Q inductors. These features provide increased speed and a higher degree of system integration in wireless communications circuits.

引用

页码：120 / 123

页数：4