On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices

被引：7

作者：

Mura, G ^{[1
]}

Vanzi, M

Stangoni, M

Ciappa, M

Fichtner, W

机构：

[1] Univ Cagliari, INFM, DIEE, I-09123 Cagliari, Italy

[2] ETH, Swiss Fed Inst Technol, CH-8092 Zurich, Switzerland

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 9-11期

关键词：

D O I：

10.1016/S0026-2714(03)00298-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we investigate the physical mechanism, which leads to the degradation of the etch rate of the Iodine-Iodide based selective Gold etchants when used for the failure analysis of optoelectronic devices failed after long operating time. The micro-texture of the surface of Gold thin film samples submitted to different etching and high temperature storage conditions is investigated by Atomic Force Microscopy. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：1771 / 1776

页数：6

共 2 条

[1] A powerful new oxidation agent towards metallic gold powder:: N,N′-dimethylperhydrodiazepine-2,3-dithione (D) bis(diiodine).: Synthesis and X-ray structure of [AuDI2]I3 [J].

Bigoli, F ;

Deplano, P ;

Mercuri, ML ;

Pellinghelli, MA ;

Pintus, G ;

Serpe, A ;

Trogu, EF .

CHEMICAL COMMUNICATIONS, 1998, (21) :2351-2352

[2] Gold removal in failure analysis of GaAs-based laser diodes [J].

Vanzi, M ;

Bonfiglio, A ;

Salaris, P ;

Deplano, P ;

Trogu, EF ;

Serpe, A ;

Salmini, G ;

De Palo, R .

MICROELECTRONICS RELIABILITY, 1999, 39 (6-7) :1043-1047

← 1 →