Nitrogen passivation induced by atomic hydrogen:: The GaP1-yNy case -: art. no. 201303

被引：51

作者：

Polimeni, A

Bissiri, M

Felici, M

Capizzi, M

Buyanova, IA

Chen, WM

Xin, HP

Tu, CW

机构：

[1] Univ Roma La Sapienza, INFM, I-00185 Rome, Italy

[2] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

[3] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[4] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

PHYSICAL REVIEW B | 2003年 / 67卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.67.201303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the evolution of the optical properties of GaP1-yNy epilayers upon hydrogen irradiation for an extended nitrogen concentration range (y = 0.05%-1.3%). For y greater than or equal to 0.6%, photoluminescence measurements show that hydrogen leads to an apparent band gap widening and to an ensuing appearance of N cluster states in the forbidden gap of GaP1-yNy. Hydrogen removal from the samples results in a full recovery of the electronic properties of the as-grown material. For lower N concentration (y = 0.05%), hydrogen causes a spectral weight transfer from electronic levels associated with closer N pairs to those associated with more distant N pairs and single N atoms.

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