AlSb/InAs HEMTs with high transconductance and negligible kink effect

被引：12

作者：

Boos, JB ^{[1
]}

Kruppa, W ^{[1
]}

Park, D ^{[1
]}

Molnar, B ^{[1
]}

Bennett, BR ^{[1
]}

机构：

[1] SFA INC,LANDOVER,MD 20785

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 07期

关键词：

ohmic contracts; field effect transistors; high electron mobility transistors;

D O I：

10.1049/el:19960408

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlSb/lnAs HEMTs with a 200nm gate length have been fabricated and exhibit a low-field source-drain resistance of 0.6 Omega mm, a transconductance as high as 1.3S/mm, and an effective electron velocity of 3.5 x 10(7)cm/s. The HEMTs also have a negligible kink effect.

引用

页码：688 / 689

页数：2

共 4 条

[1] IMPROVED CHARGE CONTROL AND FREQUENCY PERFORMANCE IN INAS/ALSB-BASED HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].