HIGH-BREAKDOWN-VOLTAGE A1SBAS/INAS N-CHANNEL FIELD-EFFECT TRANSISTORS

被引：27

作者：

LI, X

LONGENBACH, KF

WANG, Y

WANG, WI

机构：

[1] Department of Electrical Engineering, Columbia University, New York

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 04期

关键词：

D O I：

10.1109/55.145017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs channel field-effect transistors of 1-mu-m gate length have been grown by molecular beam epitaxy and observed to operate at channel electric fields (20 kV/cm) higher than previously demonstrated and several times greater than the threshold for impact ionization in bulk InAs. Voltage gains on the order of 10 are observed with transconductances as high as 414 mS/mm and output conductances as low as 33 mS/mm. These voltage gains are comparable to GaAs-based devices and are the highest observed for InAs channel devices. Our results demonstrate for the first time the potential for practical room-temperature operation of InAs FET's.

引用

页码：192 / 194

页数：3

共 8 条

[1] HIGH-FIELD TRANSPORT IN GAAS, INP AND INAS [J].